2SK1303 silicon n-channel mos fet ade-208-1261 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device ? can be driven from 5 v source suitable for motor drive, dc-dc converter, power switch and solenoid drive outline 1 2 3 to-3p 1. gate 2. drain (flange) 3. source d g s
2SK1303 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 100 v gate to source voltage v gss ?0 v drain current i d 30 a drain peak current i d(pulse) * 1 120 a body to drain diode reverse drain current i dr 30 a channel dissipation pch* 2 100 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? notes: 1. pw 10 ?, duty cycle 1% 2. value at t c = 25?
2SK1303 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 ?, v ds = 0 gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 250 ? v ds = 80 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.05 0.06 i d = 15 a, v gs = 10 v * 1 0.06 0.09 i d = 15 a, v gs = 4 v * 1 forward transfer admittance |yfs| 13 22 s i d = 15 a, v ds = 10 v * 1 input capacitance ciss 1750 pf v ds = 10 v, v gs = 0, output capacitance coss 710 pf f = 1 mhz reverse transfer capacitance crss 180 pf turn-on delay time t d(on) 15 ns i d = 15 a, v gs = 10 v, rise time t r 120 ns r l = 2 turn-off delay time t d(off) 390 ns fall time t f 195 ns body to drain diode forward voltage v df 1.3 v i f = 30 a, v gs = 0 body to drain diode reverse recovery time t rr 360 ns i f = 30 a, v gs = 0, di f /dt = 50 a/? note: 1. pulse test
2SK1303 4 120 80 40 0 50 100 150 case temperature t c (?) channel dissipation pch (w) power vs. temperature derating 500 100 10 0.5 10 100 1,000 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 200 5 1 ta = 25? 10 m s 100 m s 1 ms dc operation (t c = 25?) pw = 10 ms (1 shot) operation in this area is limited by r ds (on) 50 20 2 1.0 3 30 300 50 820 drain to source voltage v ds (v) drain current i d (a) typical output characteristics 40 10 41216 0 20 30 4 v v gs = 2.5 v pulse test 5 v 10 v 7 v 3.5 v 3 v 50 25 gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 40 10 134 ?5? 0 20 30 v ds = 10 v pulse test 75? t c = 25?
2SK1303 5 5 410 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) 4 1 268 0 2 3 i d = 50 a drain to source saturation voltage vs. gate to source voltage pulse test 20 a 10 a 0.5 10 200 drain current i d (a) static drain to source on state resistance r ds (on) ( w ) 0.2 0.01 5 20 100 2 0.05 0.1 static drain to source on state resistance vs. drain current v gs = 4 v pulse test 10 v 0.02 0.005 50 0.20 40 160 case temperature t c (?) static drain to source on state resistance r d s (on) ( w ) 0.16 0.04 0 80 120 0 0.08 0.12 static drain to source on state resistance vs. temperature 10 a pulse test i d = 20 a ?0 v gs = 10 v v gs = 4 v 20 a 50 a 10 a 50 250 drain current i d (a) forward transfer admittance ? yfs ? (s) 20 2 1.0 20 5 10 forward transfer admittance vs. drain current ?5? v gs = 10 v pulse test 1.0 t c = 25? 75? 10 5 0.5
2SK1303 6 5,000 5 reverse drain current i dr (a) reverse recovery time t rr (ns) 2,000 200 1.0 10 50 50 500 1,000 body to drain diode reverse recovery time 0.5 100 20 di/dt = 50 a/ m s, ta = 25? v gs = 0 pulse test 2 crss coss 10,000 20 50 drain to source voltage v ds (v) capacitance c (pf) 100 10 30 40 10 1,000 typical capacitance vs. drain to source voltage v gs = 0 f = 1 mhz 0 ciss 100 40 100 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics 80 20 20 60 80 0 40 60 v ds 25 v 20 16 4 0 8 12 v dd = 25 v 50 v 80 v i d = 30 a 50 v v gs gate to source voltage v gs (v) v dd = 80 v 250 drain current i d (a) switching time t (ns) 1,000 100 1.0 5 20 20 200 500 v gs = 10 v, v dd 30 v pw = 2 m s, duty < 1% 0.5 50 10 switching characteristics t d (off) t r t d (on) 10 = . . t f
2SK1303 7 50 0.8 2.0 source to drain voltage v sd (v) reverse drain current i dr (a) 40 0.4 1.2 1.6 20 30 reverse drain current vs. source to drain voltage pulse test 0 10 10 v v gs = 0, ?0 v 5 v 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1.0 0.1 0.3 d = 1 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m t c = 25? 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse t pw p dm d = t pw q ch? (t) = g s (t) ? q ch? q ch? = 1.25?/w, t c = 25? normalized transient thermal impedance vs. pulse width vin monitor vout monitor r l 50 w vin = 10 v d.u.t . v dd = 30 v . switching time test circuit vin 10 % 90 % 90 % 90 % 10 % t d (on) t d (off) t r t f vout 10 % wavewforms
2SK1303 8 package dimensions f 3.2 0.2 4.8 0.2 1.5 0.3 2.8 0.6 0.2 1.0 0.2 18.0 0.5 19.9 0.2 15.6 0.3 0.5 1.0 5.0 0.3 1.6 1.4 max 2.0 2.0 14.9 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 hitachi code jedec eiaj mass (reference value) to-3p conforms 5.0 g as of january, 2001 unit: mm
2SK1303 9 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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